MOSIS 2.0 USC Viterbi Information Sciences Institute CA Dreams

Offered MPW Services - Si CMOS, Compound Semiconductor

MPW Services Flowchart

MOSIS 2.0 offers a comprehensive range of Multi-Project Wafer (MPW) services, supporting both silicon CMOS and advanced compound semiconductor technologies. Our platform provides seamless access to a wide array of commercial silicon MPW services from leading foundries, including TSMC, Intel, Samsung, SkyWater Technology, GlobalFoundries, and Tower Semiconductor. Covering technology nodes from 12 nm to 350 nm and supporting wafer sizes from 100mm to 300mm, MOSIS 2.0 enables the development of diverse applications, from state-of-the-art research to mature silicon-based products.

In addition to silicon CMOS technologies, MOSIS 2.0 collaborates with three DoD-volume fabs—HRL Laboratories, Teledyne, and Northrop Grumman—to offer advanced group III/V MPW services, including GaN HEMT, GaAs HEMT, and InP HBT/HEMT technologies. These partnerships provide industry-leading solutions for high-performance RF, power electronics, and photonic applications. Furthermore, our collaboration with WIN Semiconductors adds cutting-edge GaAs and GaN HEMT MPW services, supporting technology nodes from 100 nm to 500 nm, which are ideal for wireless communication and high-frequency electronic devices.

With comprehensive front-end and back-end capabilities, full customization options, and support for heterogeneous integration, MOSIS 2.0 provides a versatile and robust platform to meet the diverse needs of our customers. We are also actively collaborating with CA DREAMS hub members, other Microelectronics Commons superhubs, and CHES partners, which offer additional resources and expertise to further enhance our MPW services. Our extensive MPW services, combined with comprehensive chip design support, enable innovators to realize their cutting-edge semiconductor products with efficiency and confidence.

Fab Partner Availability Process Offering Technology Node Tapeout Frequency Wafer Size
TSMC Currently Available MPW Dedicated Si CMOS 12nm, 16nm, 22nm, 28nm, 40nm, 45nm, 55nm, 65nm, 90nm, 130nm 2-10 per year 300mm
180nm, 250nm, 350nm 2-26 per year 200mm
Intel Foundry MPW Si CMOS 16nm, 22nm 4 per year 300mm
Samsung Foundry Si CMOS 28nm, 65nm, 130nm 2-4 per year 300mm
SkyWater Technology Si CMOS 90nm, 130nm 2-4 per year 200mm
WIN Semiconductors MPW Dedicated GaAs pHEMT 100nm, 150nm, 180nm, 250nm, 450nm, 500nm 2-4 per year 150mm
GaAs HBT 4th Gen, 5th Gen, 7th Gen 2-4 per year 150mm
GaN HEMT 120nm, 150nm, 250nm, 450nm 2-4 per year 100mm
HRL Laboratories OY-1 MPW T3 GaN HEMT 40nm 2 per year 100mm
Teledyne TSC250 InP HBT 250nm 3 per year 100mm
Northrop Grumman GaN GaN20_PWR HEMT 200nm 4 per year 100mm