Offered MPW Services - Si CMOS, Compound Semiconductor

MOSIS 2.0 offers a comprehensive range of Multi-Project Wafer (MPW) services, supporting both silicon CMOS and advanced compound semiconductor technologies. Our platform provides seamless access to a wide array of commercial silicon MPW services from leading foundries, including TSMC, Intel, Samsung, SkyWater Technology, GlobalFoundries, and Tower Semiconductor. Covering technology nodes from 12 nm to 350 nm and supporting wafer sizes from 100mm to 300mm, MOSIS 2.0 enables the development of diverse applications, from state-of-the-art research to mature silicon-based products.
In addition to silicon CMOS technologies, MOSIS 2.0 collaborates with three DoD-volume fabs—HRL Laboratories, Teledyne, and Northrop Grumman—to offer advanced group III/V MPW services, including GaN HEMT, GaAs HEMT, and InP HBT/HEMT technologies. These partnerships provide industry-leading solutions for high-performance RF, power electronics, and photonic applications. Furthermore, our collaboration with WIN Semiconductors adds cutting-edge GaAs and GaN HEMT MPW services, supporting technology nodes from 100 nm to 500 nm, which are ideal for wireless communication and high-frequency electronic devices.
With comprehensive front-end and back-end capabilities, full customization options, and support for heterogeneous integration, MOSIS 2.0 provides a versatile and robust platform to meet the diverse needs of our customers. We are also actively collaborating with CA DREAMS hub members, other Microelectronics Commons superhubs, and CHES partners, which offer additional resources and expertise to further enhance our MPW services. Our extensive MPW services, combined with comprehensive chip design support, enable innovators to realize their cutting-edge semiconductor products with efficiency and confidence.
Fab Partner | Availability | Process Offering | Technology Node | Tapeout Frequency | Wafer Size | |
---|---|---|---|---|---|---|
TSMC | Currently Available | MPW Dedicated | Si CMOS | 12nm, 16nm, 22nm, 28nm, 40nm, 45nm, 55nm, 65nm, 90nm, 130nm | 2-10 per year | 300mm |
180nm, 250nm, 350nm | 2-26 per year | 200mm | ||||
Intel Foundry | MPW | Si CMOS | 16nm, 22nm | 4 per year | 300mm | |
Samsung Foundry | Si CMOS | 28nm, 65nm, 130nm | 2-4 per year | 300mm | ||
SkyWater Technology | Si CMOS | 90nm, 130nm | 2-4 per year | 200mm | ||
WIN Semiconductors | MPW Dedicated | GaAs pHEMT | 100nm, 150nm, 180nm, 250nm, 450nm, 500nm | 2-4 per year | 150mm | |
GaAs HBT | 4th Gen, 5th Gen, 7th Gen | 2-4 per year | 150mm | |||
GaN HEMT | 120nm, 150nm, 250nm, 450nm | 2-4 per year | 100mm | |||
HRL Laboratories | OY-1 | MPW | T3 GaN HEMT | 40nm | 2 per year | 100mm |
Teledyne | TSC250 InP HBT | 250nm | 3 per year | 100mm | ||
Northrop Grumman | GaN GaN20_PWR HEMT | 200nm | 4 per year | 100mm |